MemSilicon completes tape-out of 1Gb 1T4R RRAM chip MountTai 2026
Overview
MemSilicon says it completed tape-out of MountTai 2026 (泰山一号), its first high-density, high-capacity 1T4R RRAM chip, on October 12, 2026.
The 1Gb chip is built on a 28nm CMOS process and is now in verification. The company reports a density of 30Mb/mm² and access latency under 20ns, and says the chip includes on-die error correction and circuit-level techniques for reliability and low power.
The company targets on-chip storage for model weights and KV cache in SoCs, embodied AI devices and AI PCs, according to Pandaily. Pandaily reports that MemSilicon's claim to be the world's first chip of this type has not been independently verified.
Written by AI from the articles below · updated Oct 14, 4:42 AM ET
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Article timeline
The articles in this story. Times are ET.
- PandailyNewsMemSilicon taps out MountTai 2026, a 28nm 1Gb RRAM chip with one transistor per four cells
AIMemSilicon says it completed tape-out of MountTai 2026, a 28nm 1Gb RRAM chip using a 1T4R cell structure, on October 12. The company reports 30Mb per square millimeter density, access latency under 20 nanoseconds, and on-die error correction, and it says the chip is now in validation. The company targets on-chip storage for model weights and KV cache in SoCs, embodied AI devices, and AI PCs, but its claim to be the world's first chip of this type has not been independently verified.
- QbitAINewsMemSilicon completes tape-out of 1Gb 1T4R RRAM chip Mountain Tai One
AIMemSilicon says it has completed tape-out of Mountain Tai One, its first high-density, high-capacity 1T4R RRAM chip, on October 12, 2026. The 1Gb chip is built on a 28nm CMOS process with a density of 30Mb/mm² and access latency under 20ns, and it is now in verification. The company says the design integrates on-chip hardware error correction and a set of circuit-level techniques for reliability and low power.
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